Sensor Current Direction

•	In a spin-valve, the sense current travels between the magnetic shields, parallel to the sensor plane.
•	In a tunnel-valve, the sense current travels from one magnetic shield to the other, perpendicular to the sensor plane.

Tunnel-valve Effect:

•	The magneto resistance in a tunnel-valve originates from a change in tunneling probability dependent on the relative magnetic orientation of two ferromagnetic layers.

Tunnel-vale


>50% tunnel magnetoresistance
is possible at room temperature

•	The response of a free ferromagnetic layer to the magnetic field of the storage media results in a change of electrical resistance in the tunnel-valve sensor.

Tunnel-valve read head


(Tunel-valve read head with inductive write head.)